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IGBT with Diode
IXSH25N120AU1
"S" Series - Improved SCSOA Capability
C G
IC25 = 50 A VCES = 1200 V VCE(sat) = 4.0 V
E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tsc PC TJ TJM TSTG Md Weight Max. Lead Temperature for Soldering (1.6mm from case for 10s) Mounting torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 33 W Clamped inductive load, L = 100 H TJ = 125C, VCE = 720 V; VGE = 15V, RG = 33W TC = 25C Maximum Ratings 1200 1200 20 30 50 25 80 ICM = 50 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ... +150 s W C C C V V V V A A A A Features * High frequency IGBT with guaranteed short circuit SOA capability. * IGBT with anti-parallel diode in one package * 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses * MOS Gate turn-on - drive simplicity Applications * AC motor speed control * DC servo and robot drives * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies * DC choppers Advantages * Saves space (two devices in one package) * Easy to mount (isolated mounting hole) * Reduces assembly time and cost * Operates cooler * Easier to assemble
G E C
TO-247 AD
1.15/10 Nm/lb-in. 6 300 g C
Symbol
Test Conditions
Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 1200 4 TJ = 25C TJ = 125C 8 V V
BVCES VGE(th) ICES
IC IC
= 4 mA, VGE = 0 V = 2.5 mA, VCE = VGE
VCE = 0.8 VCES , VGE= 0 V Note 2
500 mA 8 mA + 100 nA 4.0 V
IGES VCE(sat)
VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
94521C(7/00)
(c) 2000 IXYS All rights reserved
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IXSH25N120AU1
Symbol Test Conditions (T J = 25C unless otherwise specified) gfs IC(on) C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi tc Eoff td(on) t ri E(on) td(off) tfi tc Eoff RthJC RthCK Reverse Diode (FRED) 0.25 Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100H RG = 18 W VCLAMP = 0.8 VCES Note 1 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100H RG = 18 W, VCLAMP = 0.8 VCES Note 1 IC = Ic90, VGE = 15 V, VCE = 0.5 VCES IC = IC90, VCE = 10 V, Pulse test, t < 300 s, duty cycle < 2 % VGE = 15V, VCE = 10 V VCE = 25 V, VGE = 0 V, f = 1 MHz Characteristic Values Min. Typ. Max. 10 17 140 2850 210 50 120 30 50 100 200 450 650 800 9.6 100 200 1.8 450 900 1200 17 S A pF pF pF nC nC nC ns ns ns ns ns mJ ns ns mJ ns ns ns mJ 0.63 K/W K/W
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXSH) Outline
1.5 2.49
Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 2.5 TJ = 125C TJ = 25C 40 16 300 2.2 60 V V ns A ns 1.0 K/W
VF
IF
= IC90, VGE = 0V
Pulse test, t< 300 s, duty cycle < 2% t rr IRM t rr RthJC IF IF TJ = 1A; di/dt = -100/s; VR = 30V; = IC90, VGE = 0V, -diF/dt = 240 A/s = 100C, VR = 540V
Notes: 1) Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or Rg values. 2) Device must be heatsunk for high temperature measurements to avoid thermal runaway.
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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